IRF540N-TO-220-3-MOSFET

IRF540N (TO-220-3) MOSFET (Pack Of 2 ICs)

₹40.00

IRF540N (TO-220-3) MOSFET 

  1. Drain to source voltage Vds is 100V
  2. Gate to source voltage is ±20V
  3. On Resistance Rds(on) of 44mohm at Vgs of 10V
  4. Power dissipation Pd of 130W at 25°C

1 in stock

SKU: OL-P-127 Category:

Description

IRF540N (TO-220-3) MOSFET 

The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in wide variety of applications.

Features:

  1. Drain to source voltage Vds is 100V
  2. Gate to source voltage is ±20V
  3. On Resistance Rds(on) of 44mohm at Vgs of 10V
  4. Power dissipation Pd of 130W at 25°C
  5. Continuous drain current Id of 33A at Vgs 10V and 25°C
  6. Operating junction temperature range from -55°C to 175°C
  7. Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.

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