FGL60N100BNTD Trench IGBT

Description

IGBT Trench

IGBT trench stands for Insulated-Gate Bipolar Transistor. A three-terminal power semiconductor known as an Insulated-Gate Bipolar Transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to integrate high performance and quick switching. The metal-oxide-semiconductor (MOS) gate structure controls its four alternating layers (P-N-P-N).

IGBTs are utilized for fast switching purposes and are three-pin semiconductor devices. Although the IGBT’s structure is topologically identical to that of a MOS-gate thyristor (MCT), only the transistor action is allowed across the entire device operating range. It includes BJT output characteristics and MOSFET input characteristics.

The Insulated Gate Bipolar Transistor has a standard bipolar transistor at the outputs and an insulated gate from a MOSFET at the inputs. The IGBT’s conduction pins are the collector and emitter terminals. The control terminal is at the input gate terminal. The gate terminal regulates the conduction.

The 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.