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IRF3205 MOSFET
₹19.00
Features:
- Gate to source voltage is ±20V
- On-Resistance Rds(on) of 8mohm at Vgs of 10V
- Power dissipation (Pd) of 130W at 25°C
- Continuous drain current (Id) of 110A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
- Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.
Description
IRF3205 MOSFET
The IRF3205 MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.
Specification
Additional information
| Weight | 8 g |
|---|---|
| Dimensions | 8 × 6 × 2 cm |
| No. of Output | 1 |
| Output Type | Analog Voltage |
| Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) (V) | 55 |
| Continuous Drain Current (Id) (A) | 110 |
| On - Drain-Source Resistance (Rds) (mΩ) | 8 |
| Gate-Source Voltage (Vgs) (V) | 20 |
| Gate Charge (Qg) (nC) | 200 |
| Power Dissipation(Pd) (W) | 200 |
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