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Phototransistor L14G3 (L 14 G 3) Photodiode, Photo Diode, Photo detector
₹59.00
Phototransistor L14G3
Specifications:-
- Mounting Type : Through Hole
- Collector to Emitter Breakdown Voltage : 45V
- Collector to Base Breakdown Voltage : 45V
- Emitter to Base Breakdown Voltage : 5V
- On-State Collector Current : 0.5mA
- Reception Angle : ±10°
- Operating Temperature Range (°C) : -65 to 125
5 in stock
Description
Phototransistor L14G3
The MURP1560 is ultrafast diodes (trr <55ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications.
Their low stored charge and ultra fast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. Formerly developmental type TA09905.
Features:- Ultra fast with Soft Recovery<55ns
Operating Temperature 175°C
Reverse Voltage Up to 600V
Avalanche Energy Rated Planar Construction Applications:- Switching Power Supply Power Switching Circuits General Purpose
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